Multi-threshold CMOS (MTCMOS) is the most widely used circuit technique for suppressing subthreshold leakage currents in idle circuits. When a conventional MTCMOS circuit transitions from SLEEP mode to ACTIVE mode, voltages of power and ground distribution networks are disturbed. Mode transition noise phenomenon in MTCMOS circuits is examined in this chapter. An MTCMOS circuit technique with th...

Conventional asynchronous control circuit design is complex because potential designs must be analysed for the existence of hazards and state variable races, as these may cause incorrect circuit operation. We present the innovative CMOS direct-mapped asynchronous circuit design approach, which, by defining a one-to-one mapping between state diagram and CMOS circuit implementation, removes the n...

The definition of the requirements for the design of a neural network associative memory, with on-chip training, in standard digital CMOS technology is addressed. Various learning rules that can be integrated in silicon and the associative memory properties of the resulting networks are investigated. The relationships between the architecture of the circuit and the learning rule are studied in ...

Resistive memory technologies hold the promise of replacing mainstream on-chip memory while providing enhanced throughput and capacity in modern compute systems. Demonstrating material, process, and circuit compatibility with existing CMOS infrastructures, resistive memories deliver non-volatility, no static power consumption, and improved density. Application of these technologies, however, re...

This paper addresses the definition of the requirements for the design of a neural network associative memory, with on-chip training, in standard digital CMOS technology. We investigate various learning rules which are integrable in silicon, and we study the associative memory properties of the resulting networks. We also investigate the relationships between the architecture of the circuit and...

This paper is present sinusoidal frequency doublers circuit with low voltage + 1.5 volt CMOS inverter. Main structure of circuit has three parts that is CMOS inverter circuit, differential amplifier circuit, and square root circuit. This circuit has designed to receive input voltage and give output voltage use few MOS transistor, easy to understand, non complex of circuit, high precision, low e...

As CMOS scaling options are exhausted by fundamental limitations, device and circuit integration in the third-dimension could provide a possible pathway without extensively relying on ultra-scaled transistors. So far, however, the migration of CMOS to 3-D has been unattainable. The CMOS fabric architecture uses complementary MOSFETs in an inverted logic, where both pull-up and pull-down transis...

Spintronic oscillators are nanodevices that are serious candidates for CMOS integration due to their compactness and easy frequency tunability. For a crystal oscillator to work, there must exist a feedback path with properly What practical circuits do is design such that we have a phase-shift of 180. A double balanced down conversion oscillator mixer using 90 nm CMOS technology is proposed in a...

As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for i...

This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of 13mV/ for °C a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is mounted on CMOS oscillator chips .