The chemical transformations taking place during many of the reactions Si surface have been well documented, but in situ dynamics remain largely unexplored even for widely used electrochemical processes such as metal-assisted etching (MACE). In this work, we design both n- and p-type photoconductors covered with silver nanoparticles to demonstrate photoconductors’ sensitivity MACE process their...

Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structur...

Recent progress of wet etching of Z-cut LN, of inductively coupled plasma (ICP-) etching of X-cut LN, and of ICP-etching of proton-exchanged X-cut LN is reported to fabricate low loss ridge guides, micromechanical, and photonic crystal structures. Introduction The development of lithium niobate (LiNbO3, LN) integrated optical devices requires etching techniques for a reliable fabrication of dee...

Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired. Practical implementation of Parylene C as a structural material requires the development of micropatterning techniques for its selective removal. Dry etching methods are currently the most suitable for bat...

The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involvin...

Cellulose nitrate films (commercially available as LR 115 films were irradiated systematically with alpha particles in the energy range from 1 to 5 MeV with incident angles from 30◦ to 90◦. After etching to remove a thickness of 6.5 m, the lengths of the major and minor axes of the alpha-particle track openings in the films were measured with an image analyser under an optical magnification of ...

In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10...

– We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale: the weakening of backbonds following OH termination of surface sites and the existence of significant interaction between the surface-termina...

Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.