Most conventional chemical vapor deposition (CVD) systems do not have the spatial actuation and sensing capabilities necessary to control deposition uniformity, or to intentionally induce nonuniform deposition patterns for single-wafer combinatorial CVD experiments. In an effort to address this limitation, a novel CVD reactor system has been developed that can explicitly control the spatial pro...

single-walled carbon nanotubes (swnts) with high yield and quality were synthesized using chemical vapor deposition (cvd) over co-mo/ mgo nanocatalyst in a fluidized bed reactor. different parameters such as temperature, the ratio of hydrocarbon source to hydrogen, the flow rate of gas, growth time, the size of catalyst particles, heating rate, and the kind of hydrocarbon source were examined t...

Articles you may be interested in Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy Monte Carlo simulation of surface kinetics during plasma enhanced chemical vapor deposition of SiO2 using oxygen/tetraethoxysilane chemistry Determination of the mechanical stress in plasma enhanced ...

Introduction Silicon oxynitride is a flexible material for use as planar optical waveguides because by changing the composition ( O N ratio) the refractive index can be tuned from 1.46 to 2.0'. Several methods can be used for deposition: PECVD, LPCVD and sputtering. The advantages of PECVD are easy control of composition, high deposition rate and low stress. A disadvantage is the high hydrogen ...

For the first time, patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 C using MgO, Ni, or Fe as the catalysts, and an Al2O3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption ∼6.0 eV is detected, without significant sub-band absorption centers. Elect...

A comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of a-Si:H is presented, with special emphasis on the effects of hydrogen dilution. Growth rates at comparable plasma power, for substrate temperatures between 100°C and 300°C and for various H2 dilution ratios are presented, along with optical bandgap, H content, and el...

Articles you may be interested in Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition Plasma...