The basical problems related to the application of chalcogenide vitreous semiconductor layers (mainly of As-S-Se compositions) for holography and technology of the production of different holographic optical elements are considered. The mechanisms of light sensitivity and characteristics of such media were studied. Complex investigations of the HOE relief formation was carried out and the facto...

We report the first (to our knowledge) experimental observation of resonant cavity-enhanced photosensitivity in As(2)S(3) chalcogenide glass film at 1550 nm telecommunication wavelength. The measured photosensitivity threshold is <0.1 GW/cm(2), and a photoinduced refractive index increase as large as 0.016 is observed. The photosensitive process is athermal; further, we confirm the absence of t...

A first step towards a microfabricated potentiometric thin-film sensor array for the simultaneous detection of Pb, Cd and Cu has been realized. The sensitive layers used are on the basis of chalcogenide glass materials. These thin-film chalcogenide glass materials that consist of mixtures of Pb-Ag-As-I-S, Cd-Ag-As-I-S or Cu-Ag-As-Se have been prepared by pulsed laser deposition technique. The d...

Laser action has been demonstrated in chalcogenide glass microsphere. A sub millimeter neodymium-doped gallium lanthanum sulphide glass sphere was pumped at 808 nm with a laser diode and single and multimode laser action demonstrated at wavelengths between 1075 and 1086 nm. The gallium lanthanum sulphide family of glass offer higher thermal stability compared to other chalcogenide glasses, and ...

We report the first chalcogenide-based optical parametric oscillator (OPO) relying on pure parametric gain. The all-fiber OPO operates in the wavelength range of 2 μm and is tunable over 290 nm from the combined Stokes and anti-Stokes contributions. The gain medium is a 10 cm long chalcogenide microwire made from a high modal confinement As2Se3 core with cyclo olefin polym...

Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 °C). Unlike other chalcogenide-based ion conducting device types, the SDC device does not require complicated fabrication s...

Large surface infrared photonic crystals with reflectance higher than 90% have successfully been synthesized by self-assembling large size SiO2 spheres, of 0.8 – 4.5 m diameters, followed by melt infiltration with the chalcogenide glass Ge33As12Se55 and the removal of the SiO2 spheres by chemical etching. The sphere size and the periodicity of the templates were chosen to guarantee the formatio...

Low-loss waveguides constitute an important building block for integrated photonic systems. In this work, we investigated low-loss photonic device fabrication in Ge23Sb7S70 chalcogenide glass using electron beam lithography followed by plasma dry etching. High-index-contrast waveguides with a low propagation loss of 0.5 dB/cm and microdisk resonators with an int...