In this paper we review the advancement of passive and integrated microwave biosensors. The interaction of microwave with biological material is discussed in this paper. Passive microwave biosensors are microwave structures, which are fabricated on a substrate and are used for sensing biological materials. On the other hand, integrated biosensors are microwave structures fabricated in standard ...

Bandgap Reference voltage chip is implemented in 0.25μm CMOS technology with ESD protection. This chip can be designed by using a layout tool micro wind 3.1.7 version. The chip circuit generates a reference voltage of 1.23 V. It can operate between 20oC & 70oC temperature. Band gap core produces a voltage that is insensitive to variation in temperature. It has a unique protection with respect t...

This paper describes a fully-differential 1-Tap decision feedback equalizer (DFE) in 0.18μm SiGe BiCMOS technology. The circuit is capable of equalizing NRZ data up to 40 Gbps. A look-ahead architecture is used with modifications to reduce complexity in the high speed clock distribution. An analog differential voltage controls the tap weights. The design is fabricated in 0.18μm SiGe BiCMOS tech...

High-performance transimpedance preamplifiers (TIAs) based on new CMOS common-gate (CG) and BiCMOS common-base (CB) schemes have been designed for optical communications. The new design approach potentially allows the efficient employment of circuit techniques to optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8μm process parameters, simulated performance ...

A new BiCMOS variable gain transimpedance amplifier with a large area integrated photodiode for automotive applications is presented. Through careful control of the input pole position and the frequency response of the core amplifier, the bandwidth of the transimpedance amplifier varies from 112 to 300 MHz when its gain changes from 14.2 kV to 400 V. The proposed circuit configuration maintains...

[ATM Switch] High speed ATM switch LSIs which used in B-ISDN have been developed. In 1990, 100Mbp/s BiCMOS ATM switch were reported [Kato et al., 1990]. And in 1991, a 400Mb/s 8X8 ATM switch has been developed. It realized total switch throughput of 3.2Gb/s with a 0.8mm BiCMOS technology [Tanaka et al., 1991]. A CMOS chip set for a 1.28Gb/s 16X16 output buffer ATM switch has been developed. Thi...

The design of flexible and efficient future mobile communication systems is a major challenge. The Walkstation Project involves researchers from different areas in order to find a solution via a global system approach. An important task is the investigation of new digital, highly integrated radio interfaces with low cost, small size and low power consumption based on Direct Sequence CDMA. The s...

The logic behavior and performance of ECL gates under a set of defect models are examined. These are compared with equivalent set of BiCMOS and CMOS gates. It is found that logical fault testing is inadequate for obtaining a sufficiently high fault coverage, e.g., 79% for ECL versus 54% for BiCMOS and 69% for CMOS equivalent gates. Performance degradation faults such as delay, current and Volta...

Multilevel spiral inductors are viable means to achieve enhanced inductance when designing in a multiple metallization level environment, as is typical of processes used for fabrication of RFICs. In this paper, analyses and design considerations are discussed for several spiral structures implemented in CMOS and BiCMOS technologies. Design issues considered include the performance effects of ge...