A spatially varying bandgap drives exciton motion and can be used to funnel energy within a solid (Nat. Photonics 2012, 6, 866-872). This bandgap modulation can be created by composition variation (traditional heterojunction), elastic strain, or in the work shown next, by a small twist between two identical semiconducting atomic sheets, creating an internal stacking translation u(r) that varies...

Process-induced strain dependence of impact ionization efficiency (IIE) in nMOSFETs with a tensile contact etch stop layer (CESL) is presented for the first time. From the universal relationship between the IIE and the electric field in the pinch-off region, a difference in the IIE of nMOSFETs between without and with the tensile CESL is found. This result can be mainly attributed to the narrow...

Bandgap and molecular energy level control are of great importance in improving photovoltaic properties of conjugated polymers. A common approach to tuning these parameters is to modify the structure of conjugated polymers by copolymerizing with different units. In this paper, research work focuses on the synthesis of benzo[1,2-b:4,5-b′]dithiophene (BDT) with different conjugated units and thei...

Hexagonal boron nitride is a wide bandgap semiconductor with very high thermal and chemical stability that is used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this material for deep ultraviolet emission, with intense emission around 215 nm. In the last few years, hexagonal boron nitride has been attracting even more at...

The maximal Shockley-Queisser efficiency limit of 41% for single-junction photovoltaics is primarily caused by heat dissipation following energetic-photon absorption. Solar-thermophotovoltaics concepts attempt to harvest this heat loss, but the required high temperatures (T>2,000 K) hinder device realization. Conversely, we have recently demonstrated how thermally enhanced photoluminescence is ...

Transition metal dichalcogenides, such as MoS2 and WSe2, have recently gained tremendous interest for electronic and optoelectronic applications. MoS2 and WSe2 monolayers are direct bandgap and show bright photoluminescence (PL), whereas multilayers exhibit much weaker PL due to their indirect optical bandgap. This presents an obstacle for a number of device applications involving light harvest...

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a new platform for exploring 2D semiconductor physics. Reduced screening in two dimensions results in markedly enhanced electron-electron interactions, which have been predicted to generate giant bandgap renormalization and excitonic effects. Here we present a rigorous experimental observation of extraordinarily large ...

Pyrite (FeS2), being a promising material for future solar technologies, has so far exhibited in experiments an open-circuit voltage (OCV) of around 0.2 V, which is much lower than the frequently quoted 'accepted' value for the fundamental bandgap of ∼0.95 eV. Absorption experiments show large subgap absorption, commonly attributed to defects or structural disorder. However, computations using ...