A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

We calculate the tunneling density of states (DOS) of MgB2 for different tunneling directions, by directly solving the real-axis, two-band Eliashberg equations (EE). Then we show that the numeric inversion of the standard singleband EE, if applied to the DOS of the two-band superconductor MgB2, may lead to wrong estimates of the strength of certain phonon branches (e.g. the E2g) in the extracte...

We report the observation of resonant tunneling effects a t high applied fields in a multiple quantum-well P-I-N diode. The A10,81no,5,As/Gao,4,1no,53As structure shows features in the dark current due to Zener tunneling of electrons from the lowest sub-band in a valence-band quantum well to the first and second sub-bands of an adjacent conduction-band well.

Abnormal increase of low frequency flicker noise in analog nMOSFETs with gate oxide in valence band tunneling domain is investigated. In 15Å oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at a positive gate voltage and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron an...

The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not sample the Maxwell-Boltzmann distribution of carriers that gives rise to the 60 mV/decade li...

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...