Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding ele...

Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axisoriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present tec...

Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperatu...

This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet and visible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells, respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strong polarization fields exist across the structure contri...

Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle-cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN) semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated....

Giant axonal neuropathy (GAN) is caused by loss of function of the gigaxonin protein. On a cellular level GAN is characterized by intermediate filament (IF) aggregation, leading to a progressive and fatal peripheral neuropathy in humans. This study sought to determine if re-introduction of the GAN gene into GAN-deficient cells and mice would restore proper cytoskeleton IF homeostasis. Treatment...

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...

Giant axonal neuropathy (GAN) is a progressive neurodegenerative disease caused by autosomal recessive mutations in the GAN gene resulting in a loss of a ubiquitously expressed protein, gigaxonin. Gene replacement therapy is a promising strategy for treatment of the disease; however, the effectiveness and safety of gigaxonin reintroduction have not been tested in human GAN nerve cells. Here we ...

The synthesis of hexagonal wurzite one-dimensional (1D) GaN nanostructures on c-Al2O3 substrates was investigated using a thermal chemical vapor deposition (CVD) process. The diameter of the GaN nanostructures was controlled by varying the growth time using a mixture of GaN powder and Ga metal with the ammonia gas reaction. The morphologies of the GaN nanowires and nanorods were confirmed by fi...

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN struc...