Elaborate and exhaustive first principles calculations were carried out to screen the novel properties of a series of acene fused buckybowls. The acene fused compounds exhibit hole transport property due to their higher electron injection and lower hole transport barrier relative to the work function potential of Au electrodes. The higher HOMO and lower LUMO energy levels suggest lower hole and...

The Pfirsch-Schlüter transport of impurities is calculated for stellarator geometry. Contrary to the tokamak case, where the only contribution to the particle flux arises from friction between different species, in a stellarator there is another source of impurity transport due to pressure anisotropy. However, the pressure anisotropy term is usually smaller than the friction term, so that the i...

The carrier transport of carefully purified regioregular poly(3-hexylthiophene) films has been studied using time-of-flight photocurrent measurements. We find balanced ambipolar transport with a room-temperature mobility for holes of 3Ã10−4 cm2 V−1 s−1 and for electrons of 1.5Ã10−4 cm2 V−1 s−1 at electric fields ù105 V/cm. The transport is relatively field independent and weakly temperature dep...

Plasma toroidal rotation can limit reconnection of externally applied resonant magnetic perturbation (RMP) fields δB on rational magnetic flux surfaces. Hence it causes the induced radial perturbations δBρ to be small there, thereby inhibiting magnetic island formation and stochasticity at the top of pedestals in high (H-mode) confinement tokamak plasmas. However, the δBρs induced by RMPs incre...

We have fabricated suspended few-layer (1-3 layers) graphene nanoribbon field-effect transistors from unzipped multi-wall carbon nanotubes. Electrical transport measurements show that current annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates ...

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of p-i-n GNR tunneling FETs using atomistic q...