In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and directly compared to an AlGaN- AlN-HEMT in same MOCVD. Pinch-off instability leaky capacitive measurements observed for AlScN-based HEMTs, which was correlated with a higher ideality factor lower effective potential barrier ...

For high electron mobility transistors (HEMTs) power based on AlGaN/GaN heterojunction, p-GaN gate has been the topology commonly used to deplete two dimensional gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS GaN or MOSc-HEMTs have gained interest as HEMTs thanks wider voltage swing reduced leakage current when compared HEMTs. However mandatory AlGaN barrier etching 2-D...

Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal-face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO2 mask nþ-GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 0.23Vmm by the transmission line method (TLM) in th...

Heterostructures for InAs-channel high-electron-mobility transistors (HEMTs) were investigated. Reactive AlSb buffer and barrier layers were replaced by more stable Al0.7Ga0.3Sb and In0.2Al0.8Sb alloys. The distance between the gate and the channel was reduced to 7–13 nm to allow good aspect ratios for very short gate lengths. In addition, n-InAs caps were successfully deposited on the In0.2Al0...

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are promising for high-voltage power switching applications. A concern with this new device technology is oxide reliability under prolonged high-field and high-temperature conditions. This paper studies an important aspect of oxide reliability, time-dependent dielectric breakdown (TDDB) in GaN MIS-HEMTs. We have de...

We studied submicrometer (LG = 0.15−0.25 μm) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of IDS,max = 1.5 A/mm and a record peak extrinsic transcond...

The large signal characteristics of 1 m long -gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed. The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively. High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz. Large signal gain and power density values of ...

A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This uses nitrogen ion (N+) implantation form multiple parallel nanoribbons on heterostructures, with a thin buffer layer (AlGaN/GaN NR-HEMTs). The stopping and range ions in matter simulations N+ combined measured current-field characteristics reveal good ...

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...

Using computer-aided circuit simulation, the speed of RTD-based bistable circuits has been evaluated in terms of device parameters, such as the transistor’s fT and fmax, and circuit parameters, such as sizing. Two topologies studied in this work are: 1) monostable-to-bistable transition logic element (MOBILE), and 2) quantum bistable logic circuit (QBL). The transistors studied in this paper ar...