نتایج جستجو برای: absorber layer

تعداد نتایج: 289942  

2003
Jiyon Song Sheng S. Li C. H. Huang T. J. Anderson O. D. Crisalle

Device modeling and simulation of a mechanically stacked CuGaSe2/Cu(In1-x,Gax)Se2 (CGS/CIGS) tandem solar cell have been carried out in this study. The physical model consists of a CIGS bottom cell with a double graded band-gap profile in the space charge region (SCR) and the backside of the absorber layer and a uniform band-gap CGS top cell. By varying the absorber layer thickness of the CGS t...

Journal: :Journal of materials chemistry. A, Materials for energy and sustainability 2022

Incorporating a one-dimensional (1D) perovskite capping layer on top of absorber, improves the stability solar cells (PSCs). Dissimilarity matrices gives an comparison overview across capping-absorber pairs.

2014
Hong-Min Lee

We present a broadband microwave metamaterial (MM) absorber, the unit cell of which consists of a lumped-resistor-loaded electric-inductive-capacitive (ELC) resonator and a cut-wire on the same side of a flexible polyimide substrate. In contrast to the common MM absorber, the metallic pattern layer of the proposed structure is placed parallel to the direction of propagation of the incident wave...

2016
Kunpeng Yang Min Wang Mingbo Pu Xiaoyu Wu Hui Gao Chenggang Hu Xiangang Luo

It is well known that the polarization of a linearly polarized (LP) light would rotate after passing through a single layer graphene under the bias of a perpendicular magnetostatic field. Here we show that a corresponding phase shift could be expected for circularly polarized (CP) light, which can be engineered to design the circular polarization sensitive devices. We theoretically validate tha...

2016
Md. Asaduzzaman Mehedi Hasan Ali Newaz Bahar

A simulation study of a Cu(In1 - xGax)Se2 (CIGS) thin film solar cell has been carried out with maximum efficiency of 24.27 % (Voc = 0.856 V, Jsc = 33.09 mA/cm(2) and FF = 85.73 %). This optimized efficiency is obtained by determining the optimum band gap of the absorber and varying the doping concentration of constituent layers. The Ga content denoted by x = Ga/(In + Ga) is selected as 0.35 wh...

2013
Duy-Cuong Nguyen Souichirou Tanaka Hitoshi Nishino Kyohei Manabe Seigo Ito

A three-dimensional selenium solar cell with the structure of Au/Se/porous TiO2/compact TiO2/fluorine-doped tin oxide-coated glass plates was fabricated by an electrochemical deposition method of selenium, which can work for the extremely thin light absorber and the hole-conducting layer. The effect of experimental conditions, such as HCl and H2SeO3 in an electrochemical solution and TiO2 parti...

2016
Yu-Che Ho Ping-Yi Ho Hsin-Che Lee Sheng-Kai Chang Yun-Ru Hong Ching-Fuh Lin

In ordinary polymer solar cells, the short exciton diffusion length causes increasing probability of electron–hole recombination as the active layer thickness exceeds the diffusion length. Hence, the diffusion sets a thickness limitation of the active layer. ZnO nanorods have been used to provide an advantage of electronic path, making it possible to increase the effective thickness of the acti...

2014
Bart Vermang Jörn Timo Wätjen Viktor Fjällström Fredrik Rostvall Marika Edoff Ratan Kotipalli Frederic Henry Denis Flandre

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passiv...

Journal: :The Review of scientific instruments 2013
H Meister M Willmeroth D Zhang A Gottwald M Krumrey F Scholze

The energy resolved efficiency of two bolometer detector prototypes for ITER with 4 channels each and absorber thicknesses of 4.5 μm and 12.5 μm, respectively, has been calibrated in a broad spectral range from 1.46 eV up to 25 keV. The calibration in the energy range above 3 eV was performed against previously calibrated silicon photodiodes using monochromatized synchrotron radiation provided ...

2016
Makoto Shimizu Hiroki Akutsu Shinichiro Tsuda Fumitada Iguchi Hiroo Yugami

Makoto Shimizu 1,2,*, Hiroki Akutsu 1, Shinichiro Tsuda 1, Fumitada Iguchi 1 and Hiroo Yugami 1 1 Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan; [email protected] (H.A.); [email protected] (S.T.); [email protected] (F.I.); [email protected] (H.Y.) 2 Centre de Thermique de Lyon, Unité Mixte de Recherche 50...

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