A series of new 1,2/1,3-bis[o-(N-methylidenamino-3-aryl-5-phenyl-4H-1,2,4-triazole-4-yl)phenoxy]ethane/propane derivatives 4 were prepared in good yields by treatment of 4-amino-3-aryl-5-phenyl-4H-1,2,4-triazoles 2 with certain bis-aldehydes 1.Compounds 4 were reduced with NaBH(4) to afford the corresponding 1,2/1,3-bis[o-(N-methylamino-3-aryl-5-phenyl-4H-1,2,4-triazole-4-yl)phenoxy]ethane/prop...

4H-1,4-Benzothiazines and its derivatives are potential pharmacologically and industrially useful agents. They were prepared by condensation followed by oxidative cyclization of 2-amino-4,6-dimethylbenzenethiol with varied βdiketones/β-ketoesters in dimethyl sulfoxide. On refluxing with H2O2 in glacial acetic acid, the substituted 4H-1,4Benzothiazines yielded 4H-1,4-Benzothiazine-1,1-dioxides (...

A few imidazolinones [1-aminoethyl/phenyl-2-methyl/phe- nyl-4-acetylidene/benzylidene-imidazolin-5[4H]-ones] were newly synthesized from respetive acetylidene/benzylidene oxazolinones. Schiff's bases were synthesized by the reaction between imidazolinones and benzaldehyde. The antimicrobial screening of almost all compounds showed moderate to significant activities against B. subtilis ATCC 6633...

A novel acrylate monomer containing 4H-pyran-4-one and 1,2,3-triazole ring, {1-[4-(4-oxo-6-phenyl-4H-pyran-2-yl)benzyl]-1,2,3-triazol-4-yl}methyl acrylate was synthesized by the reaction of 2-{4-[(4-(hydroxymethyl)-1,2,3-triazol-1-yl)methyl]phenyl}-6-phenyl-4H-pyran-4-one with acryloyl chloride in the presence of triethylamine. The structure of the acrylate monomer was established on the basis ...

In this paper, a high voltage normally-off trenched-and-implanted vertical JFET (TIVJFET) in 4H-SiC is investigated by way of two-dimensional numerical simulations. The structure is simple to fabricate and is expected to be able to achieve a high current density. Detailed designs are presented for 1.7kV to 14kV normally-off 4H-SiC VJFETs. A good agreement has been reached between computer model...

In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of source gas at different levels. With an increase in rate, notable transition crystalline structure layer was observed, gradually shifting from 3C-SiC. Furthermore, quality correspondingly exhibited degradation. Spe...

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...

Four N-(4-halophen-yl)-4-oxo-4H-chromene-3-carboxamides (halo = F, Cl, Br and I), N-(4-fluoro-phen-yl)-4-oxo-4H-chromene-3-carboxamide, C16H10FNO3, N-(4-chloro-phen-yl)-4-oxo-4H-chromene-3-carboxamide, C16H10ClNO3, N-(4-bromo-phen-yl)-4-oxo-4H-chromene-3-carboxamide, C16H10BrNO3, N-(4-iodo-phen-yl)-4-oxo-4H-chromene-3-carboxamide, C16H10INO3, have been structurally characterized. The mol-ecules...