نتایج جستجو برای: 311

تعداد نتایج: 6350  

Journal: :Archives of Cardiovascular Diseases Supplements 2013

2017
Chang Yi Wang Pei-Ning Wang Ming-Jang Chiu Connie L. Finstad Feng Lin Shugene Lynn Yuan-Hung Tai Xin De Fang Kesheng Zhao Chung-Ho Hung Yiting Tseng Wen-Jiun Peng Jason Wang Chih-Chieh Yu Be-Sheng Kuo Paul A. Frohna

INTRODUCTION A novel amyloid β (Aβ) synthetic peptide vaccine (UB-311) has been evaluated in a first-in-human trial with patients of mild-to-moderate Alzheimer's disease. We describe translational research covering vaccine design, preclinical characterization, and phase-I clinical trial with supportive outcome that advances UB-311 into an ongoing phase-II trial. METHODS UB-311 is constructed ...

Journal: :The Journal of the Society of Chemical Industry, Japan 1951

Journal: :Sakarya Üniversitesi İlahiyat Fakültesi Dergisi (SAUIFD) 2015

Journal: :Astronomische Nachrichten 1891

1997
Jeongnim Kim John W. Wilkins Furrukh S. Khan Andrew Canning

We perform total-energy calculations based on the tight-binding Hamiltonian scheme ~i! to study the structural properties and energetics of the extended $311% defects depending upon their dimensions and interstitial concentrations and ~ii! to find possible mechanisms of interstitial capture by and release from the $311% defects. The generalized orbital-based linear-scaling method implemented on...

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

1999
L. S. Robertson M. E. Law K. S. Jones D. S. Simons

Amorphization of a n-type Czochralski wafer was achieved using a series of Si implants of 30 and 120 keV, each at a dose of 1310 cm. The Si implants produced a 2400 Å deep amorphous layer, which was then implanted with 4 keV 1310/cm B. Postimplantation anneals were performed in a tube furnace at 750 °C, for times ranging from 15 min to 6 h. Secondary ion mass spectrometry was used to monitor th...

Journal: :Journal of nanoscience and nanotechnology 2010
Lu Wang Meicheng Li Min Xiong Wenxin Wang Hanchao Gao Liancheng Zhao

The InAs/InGaAs dots-in-a-well (DWELL) structures were grown on both GaAs(311) B and (100) substrates by molecular beam epitaxy. Quantum dots (QDs) grown on GaAs(311) B substrate are of higher density and more uniform size distribution, yet QDs grown on GaAs(100) substrate demonstrate a bimodal size distribution. The growth mechanism of these surface morphologies was briefly discussed. We found...

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