A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of AlN epilayers is studied. Atomic force microscopy (AFM) and x-ray diffraction (XRD) results reveal that the nucleation layer plays a critical role...

AlxGa1−xN/GaN x 0.3 heterostructures with and without a high-temperature HT AlN interlayer IL have been grown on sapphire Al2O3 substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL on structural, morphological, and optical properties of the hete...

High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is...

Daily injections of parathyroid hormone (PTH) are the only FDA-approved anabolic treatment for osteoporosis; however PTH is only clinically approved for treatment periods of up to 24months. To enhance its anabolic effect, combining PTH with anti-resorptive therapy was proposed and expected to maximize the effectiveness of PTH. The current study aimed to elucidate structural mechanisms through w...

The purpose of the present study was to compare the effects of alendronate (ALN) and alfacalcidol (ALF) on the femoral bone mass and bone strength in orchidectomized rats and to clarify the skeletal benefits of combined administration of ALN and ALF. Fifty male Sprague-Dawley rats, 3 months of age, were randomized by the stratified weight method into five groups: the age-matched control (CON), ...

For the first time, highly c-axis oriented heteroepitaxial AlN thin films have been successfully grown on epitaxial 3C-SiC films on Si (100) substrates. The AlN films deposited by the AC reactive magnetron sputtering at temperatures of approximately 300-450 °C were characterized using the scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and transmissio...

Nanostructured composites with efficient percolation networks are promising candidates for packaging materials due to their high thermal conductivity. In this study, we investigate the thermal conductivity of composites consisting of a combination of exfoliated graphene nanoplatelet (xGNP) and aluminum nitride (AlN) particles in polyvinylidine fluoride (PVDF) matrix. The surfaces of the AlN par...

A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl ammonium hydroxide (TMAH) of 25 wt.% solution is used as an etching solution for the AlN thin film...

We present a structural, morphological, magnetic, and magneto-optical study of cobalt nanoparticles deposited on 50 Å AlN/c-sapphire substrates and embedded in an AlN matrix. The dependence of the properties of Co nanoclusters deposited on AlN with growth temperature and amount of deposited Co are studied and discussed. Also we directly compare the properties of as grown and AlN embedded Co nan...

High temperature characteristics of langasite surface acoustic wave (SAW) devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN...