Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microsco...

Nitrogen incorporation in HfO2/SiO2 films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO2 blanket films deposited by atomic layer deposition on either SiO2 or NH3 treated Si 100 substrates have been subjected to NH3 and N2 anneal processing. Several high resolution techniques including electron microscopy ...

Hafnia (HfO2) is a technologically important hard material with a relatively high dielectric constant and wide band gap [1]. However, the basic properties of HfO2 have been little studied in the literature due to its close resemblance to zirconia in chemical properties. In the bulk, the monoclinic (space group: P21/c) phase represents the thermodynamic minimum; phase transformation to a distort...

The changes in the electrical and physical properties of HfO2 films grown using atomic layer deposition (ALD) on Si1-XGeX (x=0.1, 0.2, 0.3) substrates after post-annealing have been studied. The migration of Ge plays a key role in reducing the capacitance equivalent thickness (CET) whilst keeping the leakage current density constant after post-annealing. The Ge atoms which have already diffused...

We present a study of double- and single-stranded DNA transport through nanopores fabricated in ultrathin (2-7 nm thick) freestanding hafnium oxide (HfO2) membranes. The high chemical stability of ultrathin HfO2 enables long-lived experiments with <2 nm diameter pores that last several hours, in which we observe >50 000 DNA translocations with no detectable pore expansion. Mean DNA velocities a...

We present a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and by electron beam evaporation (e-beam), with equivalent oxide thicknesses in the ran...

The structural and electronic properties of HfO2 thin films grown by atomic layer deposition (ALD) under various ozone concentrations were investigated using X-ray diffraction (XRD), photoemission (XPS), reflectometry (XRR), and absorption spectroscopy (XAS) and their fine structure (XAFS) analysis. It was found that in the as-grown states, the oxygen stoichiometry and local atomic structure in...

Core-shell structured silicon nanowires (Si NWs) were obtained by coating Si NWs with an HfO2 layer. Enhanced photoluminescence (PL) and a slightly decreased PL lifetime are achieved by HfO2 coating. Furthermore, the sensing stability is strongly improved. The improvement of PL properties is interpreted in terms of surface passivation and the Purcell effect.

Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the of overlayer, bottom dielectric pregrown Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 used as metal precursor for layer. O2 plasma-assisted process applied growing from also top To improve transfer, effects surface pretreatments as-grown and ag...

High-performance inversion-type enhancement-mod nchannel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm sh...