Digital forensic investigators often need to extract data from a seized device that contains NAND flash memory. Many such devices are physically damaged, preventing investigators from using automated techniques to extract the data stored within the device. Instead, investigators turn to chip-off analysis, where they use a thermal-based procedure to physically remove the NAND flash memory chip f...

We propose a new approach, called dynamic program and erase scaling (DPES), for improving the endurance of NAND flash memory. The DPES approach is based on our key finding that the NAND endurance is dependent on the erase voltage as well as the number of P/E cycles. Since the NAND endurance has a near-linear dependence on the erase voltage, lowering the erase voltage is an effective way of impr...

Current in-memory databases clearly outperform their diskbased counterparts. In parallel, recent PCIe-connected NAND flash devices provide significantly lower access latencies than traditional disks allowing to re-introduce classical memory paging as a cost-efficient alternative to storing all data in main memory. This is further eased by new, dedicated APIs which bypass the operating system, o...

While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash memory. In particular, it's critical to enhance metadata reliability, which occupies only a small portion of the storage space, but maintains ...

Multi-level cell (MLC) NAND flash memories are widely used because of their high data transfer rate, large storage density and long mechanical durability. Linear error correcting codes (ECC) such as Reed-Solomon (RS) codes and Bose-Chaudhuri-Hocquenghem (BCH) codes are often used for error correction. Although linear codes can efficiently detect and correct random errors, they are not sufficien...

The data reliability has become an important issue in most communication and storage systems for high speed operation and mass data process. Various error correction code are provided for improving data reliability. A Reed-Solomon code is quite suitable for burst errors, but in case of random errors, it has some difficulty. For MLC NAND flash memories, BoseChaudhuriHocquenghem (BCH) codes are f...

In recent years, many storage systems use NAND flash memory increasingly as their secondary storages. NAND flash memory has non-volatile memory characteristics with low power, low latency and high reliability. On the other hand, NAND flash memory has different issue, compared to existing secondary storages, which is the characteristics such as erase-before-write, low endurance and different ope...

Even though its advantages such as non-volatility, fast write access time and solid-state shock resistance, NAND flash memory suffers from out-place-update, limited erase cycles, and page-based I/O operations. How to provide fast mounting and consistency of file system and data for flash memory file systems has become important research topics in recent years. In this paper, we design and propo...

NAND flash memory has many advantageous features as a storage medium, such as superior performance, shock resistance, and lowpower consumption. However, the erase-before-write nature and the limited number of write/erase cycles are obstacles to the promising future of NAND flash memory. An intermediate software layer called Flash Translation Layer (FTL) is used to overcome these obstacles. In t...