This letter proposes an ultra-wideband switched T-type phase shifter, which covers the whole X/Ku band. The proposed shifter integrates a filter compensation structure, achieving flat relative shift in broadband, conventional one cannot acquire. In addition, designed can further reduce error and improve capability with greater than 45°. Employing architecture, 90° is fabricated 0.15-μm GaAs pHE...

This paper provides the details of a study on effects electron irradiation two Low Noise Amplifiers (LNA), Gallium-Arsenide (GaAs) pseudomorphic high mobility transistor (pHEMT) based and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that properties GaAs SiGe HBT's are very tolerant gamma, neutron, proton without additional radiation hardeni...

This paper presents the x-band 5-bit MMIC digital attenuator with low phase shift. Phase compensation techniques were used in the MMIC design to reduce the phase shift. This attenuator is fabricated with 0.2μm GaAs PHEMT process. Measurement results of the developed MMIC chips in the xband show that the 5-bit MMIC digital attenuator has 0.5dB resolution and 15.5dB dynamic attenuation range, inp...

This paper reports a novel MMIC balanced sub-harmonic cold FET mixer for MVDS applications using 0.15mm GaAs pHEMT. The mixer, which includes a LO buffer amplifier, was optimized for highly linear upconversion performance in the 42-43.5GHz RF band, 19.520.5GHz LO band and 2.45-3.45 GHz IF band. A dedicated simulation method has been developed to optimize conversion loss and determine optimum ma...

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

A compact double-balanced monolithic star mixer for Kaband applications using 0.25μm GaAs pHEMT process is presented. With multi-coupled lines technology, the proposed dual 180◦ hybrid is produced and applied to a star mixer successfully. The proposed hybrid adopts the power divider and two types of multi-coupled lines to improve the return loss and isolation at the balance outputs of a traditi...

This work presents a monolithic DC~4GHz 6-bit digital attenuator with low insertion phase shift and attenuation error. Based on GaAs E/D pHEMT process, a serial-to-parallel converter is introduced to decrease the control pads of the chip. In the 16dB attenuation bit, a switched-path-type topology is employed in order to extend the bandwidth and achieve low insertion phase shift. The attenuator ...