The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50 nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area. In this paper, a low overlap capacitance, surround gate, vertical MOSFET technology is presented. A new process that uses spacer or fillet local oxidation is develope...

Significant beam intensity-dependence of the vertical emittance growth was experimentally observed at the Accelerator Test Facility (ATF) at KEK extraction beamline. This paper presents the simulations of possible vertical emittance growth sources, particularly in the extraction channel, where the magnets are shared by both the ATF extraction beamline and its damping ring. The vertical emittanc...

Abstract   Vertical cooperative (co-op) advertising is typically a cost sharing mechanism and coordinated effort by the channel’s members in order to increase demand and overall profits. In this marketing strategy, the manufacturer shares a fraction of the retailer’s advertising investment. This paper studies the advertising and pricing decisions in a retailer-manufacturer supply chain in which...

Water flow in open channels is always subject to the resistance to flow and energy dissipation. For design purposes, one of the needed variables is the hydraulic resistance coefficient. For this mean, the influence of cross-sectional shape together with secondary flow cells and lateral distribution of true boundary shear stress have not yet been fully explored. This paper surveys the number of ...

In this paper, a modified two-fluid model has been adopted to simulate the process of upward vertical subcooled flow boiling of refrigerant R-113 in a vertical annular channel at low pressure. The modified model considers temperature dependent properties and saturation temperature variation and was validated against a number of published low-pressure subcooled boiling experiments. The results s...

Control of a fluid velocity profile by injection and suction of non-ionized flow in presence of a uniform steady magnetic field has important technical applications. In this paper, the unsteady incompressible and viscous conducting fluid flow has been investigated in a circular channel. The channel wall has been assumed to be non-conducting and porous. It has been subjected to a uniform steady ...

The minimization of total wire length is one of the most key issue in VLSI physical design automation, as it reduces the cost of physical wiring required along with the electrical hazards of having long wires in the interconnection, power consumption, and signal propagation delay. So, it is still important as cost as well as high performance issue. The problem of reduced wire length routing sol...

Abstract: In the inertial navigation system, the altitude error diverges exponentially if external sensors do not compensate it. To suppress divergence of the error, non-inertial aiding sensors that provide vertical information are utilized. With these sensors, the wellknown baro-inertial damping loop or the well-known Kalman filter mechanization can be constituted to compensate the error of th...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel ...