نتایج جستجو برای: tunneling field effect
تعداد نتایج: 2345540 فیلتر نتایج به سال:
In this paper, we used green's function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green's function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our result...
At total filling factor νT = 1, interlayer phase coherence in quantum Hall bilayers can result in a tunneling anomaly resembling the Josephson effect in the presence of strong fluctuations. The most robust experimental signature of this effect is a strong enhancement of the tunneling conductance at small voltages. The height and width of the conductance peak depend strongly on the area and tunn...
Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used a...
Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very imp...
In this paper, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-±1, spin-0 and spin-±2 exhibit the step structure under the external cosinusoidal magnetic field respectively , but there do not exist step structure among spin-±1 and spin-±2. The tunneling current among spin-±1 and spin-±2...
By the insertion of thin InxGa1!xN layers into Nitrogen-polar GaN p-n junctions, polarizationinduced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium ...
A new ”twice loose shoe” method in the Wheeler-DeWitt equation of the universe wave function on the cosmic scale factor a and a scalar field φ is suggested in this letter. We analysis the both affects come from the tunneling effect of a and the potential well effect of φ, and obtain the initial values a0 and φ0 about a primary closed universe which is born with the largest probability in the qu...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید