نتایج جستجو برای: tunnel diode amplifier
تعداد نتایج: 76561 فیلتر نتایج به سال:
Optoelectronic hybrid bistability and multistability in an active interferometer using a laser diode are demonstrated experimentally. The active laser-diode interferometer is composed of a Twyman-Green interferometer with an electronic feedback circuit. By feeding back the interferometer output together with an external light input through a detector to control thelaser-diode injection current,...
Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship's Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB) diode laser to characterize the velocity, the tempe...
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character ...
The highly power-efficient backscattering communication scheme holds solid potentials to lead the Internet of Things technologies. However, asymmetric radio frontend architectures that ensure cheap and pervasive communicating things tags at one end link, overburden other link (“reader”) with complicated expensive hardware. This turns out prevent integration technology in wide spectrum consumer ...
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer ...
A CW Nd:YAG master oscillator power amplifier with fibre based SBS phase conjugate mirror is reported. A four-pass amplifier configuration is employed to compensate pump induced thermal lens and birefringence in the amplifier rod in conjunction with a fibre phase conjugator to achieve diffraction limited output beam quality. Maximal attainable gain of ;1.9 for the system is obtained. Applicatio...
In this paper presents a optimization of linearity of low noise amplifier by using post linearization techniques. in this technique we have used diode connected mosfet as IMD sinker also used interstage matching for gain enhancement and reducing the effect of nonlinearity in common gate stage of cascode amplifier, this has done by using UMC .18um CMOS Technology in cadence tool. We got gain 14d...
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