نتایج جستجو برای: transition metal dichalcogenides
تعداد نتایج: 436925 فیلتر نتایج به سال:
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transitio...
Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2 and WS2 have successfully been fabricated on SiO2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer ...
Van der Waals bound heterostructures constructed with two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have sparked wide interest in device physics and technologies at the two-dimensional limit. One highly coveted heterostructure is that of differing monolayer transition metal dichalcogenides with type-II band alignment, with bound electrons and h...
In search of an improved strategy to form low-resistance contacts to semiconducting transition metal dichalcogenides, we combine ab initio density functional electronic structure calculations for an NbSe2/WSe2 interface with quantum transport measurements of the corresponding heterojunction between a few-layer WSe2 semiconductor and a metallic NbSe2 layer. Our theoretical results suggest that, ...
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-e...
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