نتایج جستجو برای: transition metal dichalcogenides

تعداد نتایج: 436925  

2016
Carmen Palacios-Berraquero Matteo Barbone Dhiren M Kara Xiaolong Chen Ilya Goykhman Duhee Yoon Anna K Ott Jan Beitner Kenji Watanabe Takashi Taniguchi Andrea C Ferrari Mete Atatüre

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transitio...

2016
Zhendong Wang Qi Huang Peng Chen Shouhui Guo Xiaoqing Liu Xuelei Liang Li Wang

Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2 and WS2 have successfully been fabricated on SiO2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer ...

Journal: :Nature communications 2015
Pasqual Rivera John R Schaibley Aaron M Jones Jason S Ross Sanfeng Wu Grant Aivazian Philip Klement Kyle Seyler Genevieve Clark Nirmal J Ghimire Jiaqiang Yan D G Mandrus Wang Yao Xiaodong Xu

Van der Waals bound heterostructures constructed with two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have sparked wide interest in device physics and technologies at the two-dimensional limit. One highly coveted heterostructure is that of differing monolayer transition metal dichalcogenides with type-II band alignment, with bound electrons and h...

Journal: :ACS nano 2017
Jie Guan Hsun-Jen Chuang Zhixian Zhou David Tománek

In search of an improved strategy to form low-resistance contacts to semiconducting transition metal dichalcogenides, we combine ab initio density functional electronic structure calculations for an NbSe2/WSe2 interface with quantum transport measurements of the corresponding heterojunction between a few-layer WSe2 semiconductor and a metallic NbSe2 layer. Our theoretical results suggest that, ...

2016
Priti Gupta A. A. Rahman Shruti Subramanian Shalini Gupta Arumugam Thamizhavel Tatyana Orlova Sergei Rouvimov Suresh Vishwanath Vladimir Protasenko Masihhur R. Laskar Huili Grace Xing Debdeep Jena Arnab Bhattacharya

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-e...

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