نتایج جستجو برای: titanium dioxide thin film

تعداد نتایج: 304983  

2014
R. Lavanya V. Vasu

This work presents the photocatalytic property of electron beam evaporated titanium dioxide (TiO2) thin films prepared at room temperature. The films were investigated for decomposition of methylene blue – eosin dye solution under visible light irradiation. The effect of annealing on structural, optical and decomposition properties was studied in detail. X-ray diffraction study revealed the amo...

2015
Lasse Karvonen Tapani Alasaarela Henri Jussila Soroush Mehravar Ya Chen Antti Säynätjoki Robert A. Norwood Nasser Peyghambarian Khanh Kieu Seppo Honkanen Harri Lipsanen

We demonstrate a novel atomic layer deposition (ALD) process to make high quality nanocrystalline titanium dioxide (TiO2) and zinc oxide (ZnO) with intermediate Al2O3 layers to limit the crystal size. The waveguide losses of TiO2/Al2O3 nanolaminates measured using the prism coupling method for both 633 nm and 1551 nm wavelengths are as low as 0.2 ± 0.1 dB/mm with the smallest crystal size. We a...

Journal: :Nano letters 2009
Qiangfei Xia Warren Robinett Michael W Cumbie Neel Banerjee Thomas J Cardinali J Joshua Yang Wei Wu Xuema Li William M Tong Dmitri B Strukov Gregory S Snider Gilberto Medeiros-Ribeiro R Stanley Williams

Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS. Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were conne...

2014
Teen Hang Meen Jenn Kai Tsai Yu Shin Tu Tian Chiuan Wu Wen Dung Hsu Shoou-Jinn Chang

In this study, the P25 titanium dioxide (TiO2) nanoparticle (NP) thin film was coated on the fluorine-doped tin oxide (FTO) glass substrate by a doctor blade method. The film then compressed mechanically to be the photoanode of dye-sensitized solar cells (DSSCs). Various compression pressures on TiO2 NP film were tested to optimize the performance of DSSCs. The mechanical compression reduces Ti...

1999
G. Harris Q. Ma D. R. Walters

Thin film coatings are used to reduce the generation of secondary electrons at the ends of the Advanced Photon Source (APS) rf cavity tuners because these electrons result in increased temperatures on the tuner. To improve the film properties over the existing evaporated titanium film, a magnetron-sputtered film of titanium nitride has been developed that is both harder and adheres more strongl...

2004
L. Castoldi G. Visalli S. Morin P. Ferrari S. Alberici G. Ottaviani F. Corni R. Tonini C. Nobili M. Bersani

Interaction between 5 lm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV He Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples were made by depositing 10 nm of titanium on a PECVD silicon oxynitride, followed by 50 nm of titanium nitride and 50 nm of titanium in the said order. I...

2011
Ghassem Kavei Auppatham Nakaruk Charles Chris Sorrell

Titanium dioxide thin films were deposited on (0001) -quartz substrate by spray pyrolysis method. The method which an aerosol of Titanium Butoxide, generated ultrasonically, was sprayed on the substrate at temperature of 400 ̊C, kept at this temperature for periods of 3, 13, 19 and 39 hours. The developed films at a crystal phase correspond to the TiO2 anatase and rutile phases. Their surface r...

Rutile-phase titanium dioxide nanorod arrays were prepared by the hydrothermal method. Then, anatase-phase nanoleaves were successfully synthesized on the nanorod arrays via mild aqueous chemistry. Nanorod arrays scanning electron microscopy revealed that the thin film is uniform and crack free and the average diameter and height of the nanorods are 90 nm and 2 µm, respectively. Furthermo...

2016
Michael Tu

The Minnesota Nano Center’s Keller Hall facility includes an atomic layer deposition (ALD) machine that is capable of depositing uniform alumina (Al2O3), hafnium oxide (HfO2), silicon dioxide (SiO2), zinc oxide (ZnO), and titanium dioxide (TiO2). ALD works by building alternate layers on a film using two different precursor gases – one usually supplying the metallic atoms and water vapor (H2O) ...

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