نتایج جستجو برای: thin layer interface
تعداد نتایج: 568744 فیلتر نتایج به سال:
This paper explores the design of a new type of name tag— a GroupWear tag—that is capable of displaying information related not simply to an individual, but rather to an interaction between two people (for example, a measure of how much they have in common). These GroupWear tags are discussed as an instance of “thin-layer” social technology: social technology that does not serve as the dominant...
Long-range surface plasmon-polaritons (LRSPP) with a propagation length equal to 180 microns at the wavelength of 633 nm have been observed at the interface of 12.5 nm-thick silver nanofilm, coated by a 20 nm-thick protective ZnS layer, with air. Their propagation has been supported by a specially prepared 40-layer 1D Photonic Crystal designed in such a manner that silver layer has been deposit...
Background and purpose: Because of the importance of early diagnosis of cervical cancer and high false negative results of conventional smear method, several studies have been performed to find a more appropriate test in recent years. Fluid-based methods especially thin prep are considered to have the highest potential to reduce the false negative results and to increase the adequacy of speci...
Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlation between the passivation quality and the interface nature between thin amorphous layers and an underlying c-Si substrate for understanding...
We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold i...
The disorder and layer transitions in the interface between an Ising spin-1/2 film denoted (n), and an Ising spin-1 film denoted (m), are studied using Monte Carlo simulations. The effects of both an external magnetic field, acting only on the spin-1/2 film , and a crystal magnetic field acting only on the spin-1 film, are studied for a fixed temperature and selected values of the coupling cons...
We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping) co-sputtering (DPCS) apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were por...
Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...
The dynamic process of the reactions during deposition of M(Hf or Zr)O2 thin films on SiO2-covered silicon substrate in oxygen deficient conditions has been investigated. A series of reactions across the interface were identified with thermodynamic arguments and with X-ray Photoelectron Spectroscopy (XPS) and transmission electron microscopy (TEM) analyses. The oxygen deficient MOx < 2 absorbs ...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید