The effect of surface bond-order loss on the classical resistivity of metallic polycrystalline thin films is studied. The potential barriers due to grain boundaries considered here contain square-well depressions on both sides taking into account the effect of surface bond-order loss for the grains in a film. Electron scattering by film surfaces is also considered following the lines of Fuchs’ ...

Thin films of LaS were prepared by using spray pyrolysis technique at 270 0 C and thickness were varied by changing the concentration of reactant solution. The films were optically characterized and their variations with film thickness were studies. It was found that thickness can be tuned by varying concentration of reactant solution. The band gap was found to vary between 2.35eV to 2.50eV. Th...

The paper describes new approach of potentiostat for very low sensor current measurements. Recent potentiostats were used as measurement devices which were standalone and sensors were connected by a screened wire. These concepts are inconvenient for the presented very low current measurements. The new approach is based on the potentiostat circuitry integrated on a chip that should be directly c...

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. Recently Huang, Rosakis and co-workers [Huang, Y., Ngo, D., Rosakis, A.J., 2005. Non-uniform, axisymmetric misfit strain: in thin films bonded on plate substrates/substrat...

The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, n...

Article history: Received 15 February 2015 Received in revised form 2 December 2015 Accepted 3 December 2015 Available online 23 March 2016 The modeling of the transient subgap density of states (DOS) for the investigation of trap densities in the oxidebased thin-film transistors is proposed. The study is based on both transient measurements and physical modeling. In history, the subgap DOS mod...