نتایج جستجو برای: thin film device

تعداد نتایج: 842385  

2005
M. Y. Nadeem Waqas Ahmed M. F. Wasiq

ZnS thin film properties are overviewed in this research paper. These include absorbance, transmittance, optical band gap, refractive index and structure (on the basis of X-ray diffraction and scanning electron microscopy). It has been observed that these film properties are dependent on various parameters e.g. thickness of the film, deposition method, deposition rate, substrate material, subst...

Journal: :Optics letters 2009
Saso Mladenovski Sebastian Reineke Kristiaan Neyts

The decay time of an exciton depends on the coupling between the dipole oscillator and the optical environment in which it is placed. For an organic light-emitting device this environment is determined by the thin-film layer structure. The radiative decay competes with nonradiative decay channels and in this way influences the luminescent efficiency and the external quantum efficiency of the de...

2018
Jingjing Chang Zhenhua Lin Chunfu Zhang Yue Hao

Organic field-effect transistors have received much attention in the area of low cost, large area, flexible, and printable electronic devices. Lots of efforts have been devoted to achieve comparable device performance with high charge carrier mobility and good air stability. Meanwhile, in order to reduce the fabrication costs, simple fabrication conditions such as the printing techniques have b...

2014
Shujie LIU Yuanliang ZHANG Zuolan YUAN

Semiconductor processing in manufacturing must be fast and highly accurate in the measuring of the surface profile of soft thin films such as photoresist. Since photoresist surface is very smooth and deformable, a device to measure is required that will measure vertical direction with a nanometer resolution in height and not damage the film during the measurement. To do this, we developed an ap...

Mohammad Mehdi Tehranchi, Seyed Mohammad Hosein Khalkhali, Seyedeh Mehri Hamidi,

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...

Journal: :Physical chemistry chemical physics : PCCP 2015
Peter Nørby Simon Johnsen Bo Brummerstedt Iversen

Films and nanosheets of layered chalcogenides are currently under intense investigation owing to their application in thin film electronic, optoelectronic, and sensor devices. Here, aqueous solution processing of the environmentally benign thiostannate, (NH4)4Sn2S6·3H2O, and its subsequent thermal decomposition to form continuous highly textured SnS2 thin films are presented. We show how to con...

2008
Tae-Ho Kim Won Mook Choi Dae-Hyeong Kim Matthew A. Meitl Etienne Menard Hanqing Jiang John A. Carlisle John A. Rogers

Thin-film diamond has many potential applications in electronics and optoelectronics, microelectromechanical systems (MEMS), wear-resistant coatings, thermal management, and other areas owing to its exceptional electronic, optical, mechanical, chemical/tribological, and thermal properties, respectively. However, challenges in the integration of thin-film diamond with other materials continue to...

1999
B. V. Vuchic K. A. Dean D. B. Buchholz R. P. H. Chang

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu307-, thin films on MgO. The YBa2Cu307--x thin film grown on a pre-sputtered region of MgO was rotated 45’ about the [OOl] axis relative to the YBa.&!u,O,-, thin film grown on an adjacent unsputtered region of the substrate. YBazCu,07-. thin films were grown using pulsed organometallic beam epitaxy (POM...

2012
J. Siegel C. N. Afonso J. Solis

Related Articles Electronic structure of buried Co-Cu interface studied with photoemission spectroscopy J. Appl. Phys. 112, 103702 (2012) Interference of surface plasmon polaritons excited at hole pairs in thin gold films Appl. Phys. Lett. 101, 201102 (2012) Effect of N2 dielectric barrier discharge treatment on the composition of very thin SiO2-like films deposited from hexamethyldisiloxane at...

2009
Tommi Riekkinen Eila Ovaska András Balogh Sergio Campos Adrian Noguero András Pataricza Kari Tiensyrjä

By means of thin film technology a reduction of size, cost, and power consumption of electronic circuits can be achieved. The required specifications are attained by proper design and combinations of innovative materials and manufacturing technologies. This thesis focuses on the development and fabrication of low-loss ceramic thin film devices for radio and microwave frequency applications. The...

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