Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for development homoepitaxy. We propose new approach grow high-quality homoepitaxial in N2-rich carrier gas and at higher supersaturation as compared heteroepitaxy. develop low-temperature an optimu...

We report GaSb-based laser diodes (LDs) grown on on-axis (001) Si substrates and emitting at 2.3 µm. Two series of LDs were studied compared. For the first series, a GaAs-based buffer layer was by metal organic chemical vapor deposition (MOCVD) before growing heterostructure molecular-beam epitaxy (MBE). second MOCVD GaSb added between GaAs MBE heterostructure. Both exhibited threshold currents...

Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCVD). The grown on crystalline Si(100) and Al2O3(0001) amorphous SiO2 a-Al2O3 substrates. Their structural properties compared with those of the Sb2Te3/Si(111) heterostructure. In addition to effect substrate, influence pre- post-growth thermal annealing is also presented. quality discussed compari...

A new type of large area metal organic chemical vapor deposition (MOCVD) system for the growth of high quality and large size ZnO materials is introduced. Materials properties of the un-doped, nand p-doped ZnO epi-films grown on sapphire substrates by this MOCVD system are studied by various techniques, including high resolution X-ray diffraction (XRD), UV–Visible optical transmission (OT), pho...

Wide band-gap semiconductors are very attractive because of their broad applications as electronics and optoelectronics materials, GaN-based materials being by far the most promising. For production such nitride-based optical power devices, metal–organic chemical vapor deposition (MOCVD) is routinely used. However, this has disadvantages, large consumption ammonia gas need for a high growth tem...

A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution from soaked cotton thread, which passes sequentially through the zones solvent and precursors. The technological capabilities TSF-MOCVD (Thread-Solution Feed MOCVD) are demonstrated examples obtaining thin epitaxial films СеО2, h-L...

Superlattices (SLs), structures consisting of periodic layers of thin films of several angstroms to tens of nanometers thick, have unique electrical and thermal properties that make them well suited for applications in optoelectronics and as fundamental learning tools in the realm of thermoelectrics. One unique characteristic of SLs is their low thermal conductivity compared to a bulk material ...

This study aims at evaluating the biocompatibility of titanium surfaces modified according two different ways: (i) deposition of a bio-inert, thin film of rutile TiO(2) by chemical vapour deposition (MOCVD), and (ii) biochemical treatment with collagen gel, in order to obtain a bio-interactive coating. Behind the comparison is the idea that either the bio-inert or the bio-active coating has spe...

The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. thickness reached 4.5 microns, a relatively high value for MOCVD. full width at half maxima of the (002) diffraction plane 26.3 arcsec, thus showing crystalline quality. showed n−-type properties with doping concentration 3.6 × 1016 cm−3 and electron mobility 137 cm2/V·s...

Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the...