Molybdenum disulfide (MoS2) has recently attracted considerable interests due to its unique properties and potential applications. Chemical vapor deposition (CVD) method is used widely to grow large-area and high-quality MoS2 single crystals. Here, we report our investigation on thermal strain-fractured (SF) single crystalline MoS2, oxidation-fractured MoS2, and normal MoS2 by atomic force micr...

In advanced microelectronics, precise design of liner and capping layers become critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLE-CVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes...

The second in a series of workshops was held at NIST on February 24-25, 1993 to discuss in depth specific topics deemed important to the characterization of diamond films made by chemical vapor deposition (CVD) and to address the need for standards in diamond technology. The topics chosen for this workshop were based on feedback from the attenders of the first workshop [1]. The audience targete...

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm(2)·V(-1)·s(-1), comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role...

Neural prostheses are micron-scale integrated circuit devices that are under development for the treatment of brain and spinal cord injuries. A key challenge in the fabrication of these siliconbased devices is the protection of the electronic components from the ambient body environment. There is a need for a biopassivation coating on these devices that is chemically inert and electrically insu...

Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their "amorphous" or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chlorid...