We have observed three-dimensional sponge-like structures as well as strips of connecting pits on the surface of the LR 115 detector after etching, which can be confused with the small tracks formed after short etching time. We have employed an atomic force microscope (AFM) to study these “damages” as well as genuine alpha tracks for short etching time. It was found that while the track and dam...

To find a suitable treatment in the preparation of Nb surface for platinum electrodeposition, different methods such as thermal oxidation, anodic oxidation, mechanical roughening, and mechanical roughening with subsequent anodic etching were examined. X-ray photoelectron spectroscopy was used to study the chemical composition of depth analysis of the surface. Moreover, in order to examine the m...

We demonstrate that holographic Bragg reflector grating structures, which are photolithographically scribed in planar waveguides, support a unique approach to apodization and overlay that uses fixed-depth etching and partial contour writing to achieve continuous reflective amplitude control.

The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond) in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ...

The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™...

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the ...

We have characterized glass-glass and glass-Si bonding processes for the fabrication of wide, shallow nanofluidic channels with depths down to the nanometer scale. Nanochannels on glass or Si substrate are formed by reactive ion etching or a wet etching process, and are sealed with another flat substrate either by glass-glass fusion bonding (550 degrees C) or an anodic bonding process. We demon...

Atomic layer etching (ALE) typically divides the etching process into two self­limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are satur...

In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer l...

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si ...