The interplay of exchange correlations and spin-orbit interaction (SOI) on the many-body spectrum of a copper phtalocyanine (CuPc) molecule and their signatures in transport are investigated. We first derive a minimal model Hamiltonian in a basis of frontier orbitals that is able to reproduce experimentally observed singlet-triplet splittings. In a second step SOI effects are included perturbat...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

In recent years, the mobile communication market represented by the mobile telephone has been showing remarkable growth. This market has been making tough demands for semiconductor integrated circuits, which are mounted components, to consume less power, have higher integration, have multi-function capability, and be faster. We at Oki have been working on developing complete depletion type SOI ...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...

Recent trends in device design bring a need for SOI wafers with ultra thin BOX below 100A. Difficulties in production of UTBOX SOI wafer by the Smart CutTM technology are highlighted. New process of internal BOX dissolution allows to overcome interface defectivity problems and results in high quality UTBOX and DSB wafers. Mechanism of internal BOX dissolution is presented together with the resu...

By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba BR and Dresselhaus D spin-orbit interaction SOI , we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly singular be...

Circuit simulation model for advanced SOI-MOSFETs has been developed by solving Poisson’s equation consistently. It is successfully proven that, as a result of solving the Poisson’s equation considering its device structure, our model is applicable for various variations of SOI-MOSFETs such as partially depleted (PD), fully depleted (FD) and dynamically depleted SOI-MOSFETs, which is the indisp...

We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectro...

While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became availa...

The styrene oxide isomerase (SOI) represents a membrane-bound enzyme of the microbial styrene degradation pathway and has been discussed as promising biocatalyst. It catalyzes the isomerization of styrene oxide to phenylacetaldehyde. In this study a styC gene, which encodes the SOI of Rhodococcus opacus 1CP, was optimized for optimal expression in Escherichia coli BL21(DE3) pLysS. The expressio...