نتایج جستجو برای: silicon carbide particle

تعداد نتایج: 258289  

2017
Ruan Ming Yike Hu Zelei Guo Rui Dong James Palmer John Hankinson Claire Berger Walt A. De Heer Ming Ruan Walt A. de Heer

We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...

2016
Mei-Yun Chang Wu-Jang Huang

Wastes from agriculture or sewage systems have several properties, such as huge volume, high humidity, and high organic composition. According to past studies, sugarcane extract, peanut shells and rice husks have high silicon content. Chemical conversion of biomass feedstock will enhance usage and provide value to agricultural waste. In this research, we applied hydrothermal carbonization to co...

2000
A. Avila I. Montero J. M. Ripalda

Thin silicon carbide films have been deposited by chemical vapor deposition on p-type ~100! silicon substrates. The composition and bonds formed in these films have been analyzed by x-ray photoelectron spectroscopy ~XPS! and infrared spectroscopy. The native surface oxide on the silicon carbide surface induced by air exposure has also been studied. Several phases are detected in the near-surfac...

2014
Hitoshi Habuka Asumi Hirooka Kohei Shioda Masaki Tsuji

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...

2012
Philip Hens Valdas Jokubavicius Rickard Liljedahl G Wagner Rositsa Yakimova P Wellmann Mikael Syväjärvi V. Jokubavicius R. Liljedahl

Cubic silicon carbide is a promising material for medium power electronics operating at high frequencies and for the subsequent growth of gallium nitride for more efficient light emitting diodes. We present a new approach to produce freestanding cubic silicon carbide (3C-SiC) with the ability to obtain good crystalline quality regarding increased domain size and reduced defect density. This wou...

Journal: :Physical review. B, Condensed matter 1993
Yoshida Onodera Ueno Takemura Shimomura

The pressure-induced phase transition in silicon carbide is studied using a constant-pressure ab initio technique. The reversible transition between the zinc-blende structure and the rock-salt structure is successfully reproduced through the simulation. The transformation mechanism at the atomistic level is characterized, and it is found that the transition is based on a tetragonal and an ortho...

2016
Daniel Thomas Cavanaugh Alan Russell Frank Peters

Metal matrix composites have been widely studied in terms of abrasion resistance, but a particular material system may behave differently as particle size, morphology, composition, and distribution of the hardening phase varies. The purpose of this thesis was to understand the mechanical and microstructural effects of combining titanium carbide with 431 series stainless steel to create a unique...

2009
Jared H. Strait Paul A. George Jahan Dawlaty Shriram Shivaraman Mvs Chandrashekhar Farhan Rana Michael G. Spencer

We report the emission of strong coherent broadband terahertz radiation from 6H-silicon-carbide SiC excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity optical rectification . We present a measurement of the ratio of nonlinear susceptibility te...

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