We report the emission of strong coherent broadband terahertz radiation from 6H-silicon-carbide SiC excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity optical rectification . We present a measurement of the ratio of nonlinear susceptibility te...

We have developed a novel technique based on the selective desorption of an oxide film in order to grow ordered arrays of silicon carbide nanocrystals on a silicon surface. These nanocrystals form as a byproduct of void nucleation in the oxide during the high-temperature vacuum annealing of silicon, a process which normally produces a random distribution of nanocrystals across the silicon surfa...

Building the Nano composites for getting material with combinational properties and improving properties of currently used material has been taken significant attention. One of the ways of building Nano composites is using a method known as powder metallurgy. Because with this method not only wastes are decreased to minimum but we can also mix the materials with high melting point with the mate...

A deformable three-reflection system that uses a bare silicon carbide substrate can function as an in-line, high-throughput (>30%), 90° phase shifter in the 50-100 nm spectral range. For a given extreme ultraviolet wavelength, an aluminum thin film can be deposited on the silicon carbide substrate to suppress the parallel (p) or perpendicular (s) polarization on single reflection or to introduc...

Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effects of silicon carbide nanofibers on the microstructure of the pyrolytic carbon and the thermal conductivity of the SiCNF-C/C composite were investigated. Results show that silicon ...

–– Modern electronic design is constrained by the ability to package working computational systems. The packaging, which includes chip packaging, circuit boards, mounting, and ancillary support (such as heat dissipation), often constrains high–end design and imposes artificial limits on performance. After examining the " ideal " circuit board material it becomes apparent that silicon carbide of...

We report on the laser ablation of composite prismatic structures using a vacuum ultraviolet (VUV) 157 nm F2 laser. Polycarbonate and CR-39 substrates have been intentionally seeded with silver wires and silicon carbide whiskers respectively. The seed particles remain attached to the underlying substrate after laser ablation, forming composite silver-polycarbonate and silicon carbide-CR-39 inte...

Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide wi...

We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation of a-, C,- m-, and Si-crystallographic faces is studied at typical industry-focused temperatures in the range from 900 to 1200 °C based on the time evolution of the oxidation mechanism. The oxide thicknesses and the growth rates are obta...