نتایج جستجو برای: sic nanotube
تعداد نتایج: 29726 فیلتر نتایج به سال:
The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder ...
Current advancement in electronic devices is so rapid that silicon, the semiconductor material most widely used today, needs to be replaced in some of the fields. Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at elevated temperature, and in harsh environments. Hexagonal polytypes of SiC, su...
We construct the set of all general (i.e. not necessarily rank 1) symmetric informationally complete (SIC) positive operator valued measures (POVMs), and thereby show that SIC-POVMs that are not necessarily rank 1 exist in any finite dimension d. In particular, we show that any orthonormal basis of a real vector space of dimension d 2 − 1 corresponds to some general SIC POVM and vice versa. Our...
Ceramic matrix composites (CMC’s), particularly silicon carbide (SiC) fiber-reinforced SiC-matrix (SiC/SiC) composites, have been studied for advanced nuclear energy applications for more than a decade. The perceived potentials for advanced SiC/SiC composites include the ability to operate at temperature regimes much higher than heat-resistant alloys, the inherent low inducedactivation nuclear ...
در این پژوهش کامپوزیت های سرامیکی sic zrb2–25 vol% به منظور بررسی تاثیر متغیرهای فرآیند (دما، زمان و فشار پرس گرم) و اندازه ذره sic (20 نانومتر، 200 نانومتر و 5 میکرومتر) روی رفتارچگال شدن، متوسط اندازه دانه zrb2 و سختی ویکرز ساخته شدند. یک روش طراحی آزمایش (روش تاگوچی) برای شناسایی میزان تاثیر هر یک از متغیرها و همچنین تعیین شرایط بهینه مورد استفاده قرار گرفت. بر اساس تحلیل های آماری فشار و دم...
Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...
در این پژوهش اثر دما و کسر حجمی تقویت کننده بر رفتار سایشی نانو کامپوزیت al/x vol% sicp (x=0, 1, 3, 5) بررسی شده است. نتایج نشان داد افزودن ذرات تقویت کننده موجب بالا رفتن دمای انتقال به سایش شدید نمونه ها می شود، به گونه ای که برای آلومینیم تقویت نشده، دمای انتقال به سایش شدید 125 درجه سانتی گراد، برای کامپوزیتal-1%sic 150 درجه سانتی گراد و برای نمونه های al-3%sic و ,al-5%sic 175 درجه سانتی گ...
STUDY OBJECTIVES To document the current practice of occupational asthma (OA) diagnosis and use of specific inhalation challenge (SIC). DESIGN, SETTING, AND PARTICIPANTS A survey evaluating the current practice of SIC was mailed to 259 residency training programs in adult pulmonary diseases, allergy and immunology, and occupational medicine accredited in the United States and Canada during th...
Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivate...
In this study, the effect of two types of SiC powders consist of SiC-1 (β-SiC) and SiC-2 (β-SiC+α-SiC) and also different values of CaO additive consist of 0, 0.4 and 0.8 weight percent on sintering behavior of sintered SiC with pressureless technique in Al2O3-Y2O3-CaO additive system was investigated. In all specimens, Al2O3:Y2O3 molar ratio was equal to 3:2 and all amounts of additive were e...
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