ThefPDB\(" Planar Doped B_arrier| diode is a device consisting of a p doping spike \v .' between two" intrinsic layers and n ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic...

This work explores the electrical characteristics of NButyl-N`-(6-hydroxyhexyl)perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI). For this purpose, Al/N-BuHHPDI/ITO Schottky diode is fabricated in which N-BuHHPDI plays the role of an active organic semiconductor layer. A 150 nm thick film of NBuHHPDI is deposited onto an indium tin oxide (ITO) substrate using the vacuum thermal evapora...

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller con...

A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ-doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarizationinduced GaN HBDs can be tuned by cont...

We report an alignment-free gallium oxide (Ga2O3) heterojunction barrier Schottky (HJBS) power diode, which utilizes the self-assembled Ni nanostructures as in situ masks for trench etching of Ga2O3 and subsequent selective-area filling p-type NiO. By increasing depth to 200 nm, relevant HJBS diode exhibits improved reverse blocking capabilities including reduced leakage current density 10−8 A/...

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...