This letter investigates hot-carrier-induced degradation on 0.1 m partially depleted silicon-on-insulator (SOI) nMOSFETs at various ambient temperatures. The thermal impact on device degradation was investigated with respect to body-contact nMOSFETs (BC-SOI) and floating-body SOI nMOSFETs (FB-SOI). Experimental results show that hot-carrier-induced degradation on drive capacity of FB-SOI device...

Abstarct The work presents the newly deploying technology in semiconductor industry called silicon on insulator (SOI). Its two technology partially and fully depleted SOI and describe how these are different from conventional bulk MOS technology, advantages over bulk technology and floating body effect of PD/FD SOI technology, factors effecting floating body such as kink effects in PD SOI, para...

it seems that endometriosis plays an important role in female factor infertility but a clear causal relationship has yet to be established. this case-control study was conducted to determine and compare the frequency and severity of endometriosis in 100 infertile women and 120 fertile multi-para women as control group. descriptive statistics, student t test and chi square test were used in anal...

This paper analyze the soft error tolerance related to layout structures on 65-nm bulk and SOI processes. The layout structure in which well contacts are placed between redundant latches suppresses MCU effectively. Also the tolerance of SOI structure transistor is estimated by TCAD simulations. The charge collection mechanism is suppressed by the BOX (Buried Oxide) in SOI transistor. Charge sha...

The occurrence of viral co-infection is a common phenomenon in cultivated and native plant species and can alter the dynamics of virus infection. In this study, disease progress was examined in single and mixed infections of Cucumber mosaic virus (CMV) and Bean yellow mosaic virus (BYMV) by measuring the rate of symptom development, disease severity and area under disease progress curve on infe...

The fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is the first model for circuit simulation based on a complete surface-potential description. HiSIM-SOI solves the surface potentials at all three SOI-surfaces perpendicular to the channel surface self-consistently. Besides verification against measured I-V characteristics, HiSIM-SOI is also verified with a 1/f noise analysis, ...

The silicon-on-insulator (SOI) material system is today widely recognized as one of the most important platforms for the development of photonic components. This is mainly due to the fact that the mass fabrication techniques of the CMOS technology can be used for the fabrication of these SOI components. However, using silicon for photonic components has significant downsides. For example, it is...

Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) ...