نتایج جستجو برای: semiconductor thin film
تعداد نتایج: 241592 فیلتر نتایج به سال:
Particle aggregation and film agglomeration have been among the main technical hurdles for solid-state thin film development and have been observed in many semiconductor and catalytic systems. In heterogeneous catalysis, particle aggregation leads to reduction of effective surface area and degradation of catalytic performance. On semiconductor surfaces, film agglomeration may give rise to elect...
Physical properties of thin films significantly differ from those of bulk materials. Also, these properties are influenced from the technological parameters of the films deposition technique. Therefore, characterization methods for evaluation of thin film properties become of high importance. A novel approach to the well-known "Hot-Probe" method is proposed and applied in our work. The conventi...
Furan substituted diketopyrrolopyrrole (DBF) combined with benzothiadiazole based polymer semiconductor PDPP-FBF has been synthesized and evaluated as an ambipolar semiconductor in organic thin-film transistors. Hole and electron mobilities as high as 0.20 cm(2) V(-1) s(-1) and 0.56 cm(2) V(-1) s(-1), respectively, are achieved for PDPP-FBF.
Resistance switching random access memory (RRAM) has drawn considerable attention for the application in nonvolatile memory element in semiconductor memory devices. A ZnO thin film now assumed to be useful for dynamic random access memory (DRAM) cell. In this paper we provide a framework to its use as a switching ON or OFF in DRAM cell. In this type of memory cell the ZnO thin film has a lot of...
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At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...
As an extension of the authors' previous report of Ref 1, we describe an improved version of dispersive white-light interferometry that enables us to measure the tomographical thickness profile of a thin-film layer through Fourier-transform analysis of spectrally-resolved interference signals. The group refractive index can also be determined without prior knowledge of the geometrical thickness...
Semiconductor-based solid-state neutron detectors have received considerable attention in recent years. These devices can be categorized as either thin-film-coated diode detectors or solid-form bulk detectors. There have been many attempts to fabricate boron-based solid-form detectors utilizing processing techniques similar to those frequently used to fabricate thin-film-coated diodes. Conseque...
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