Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the cur...

We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO ...

Electroconductive, homogeneous and dense ceramic/semiconductor/metal nanocomposites were obtained by hot press and subsequently machined by wire Electrical Discharge Machining (EDM). The addition of semiconductor and metal phases to a highperformance ceramic material produces nanocomposites which preserve the excellent mechanical properties of the ceramic/metal material while reaching the elect...

We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to pos...

We report the first-principles electronic structure of BiVO4, a promising photocatalyst for hydrogen generation. BiVO4 is found to be a direct band gap semiconductor, despite having band extrema away from the Brillouin zone center. Coupling between Bi 6s and O 2p forces an upward dispersion of the valence band at the zone boundary; however, a direct gap is maintained via coupling between V 3d, ...

We report on the pressure-induced phase transition in a model of paracrystalline silicon ~amorphous silicon with a crystalline grain! using an ab initio constant pressure simulation technique. The paracrystalline model transforms into a high-density amorphous phase at 16 GPa with a discontinuous volume change of ;24%. The transformation of the crystalline grain begins at the boundary and procee...

The dependence of the photocurrent, in a planar metalsemiconductor-metal photodetectors (MSM), on active layer thickness and incident optical power is investigated using a two-dimensional drift-diffusion model. The model numerically solves the hasic semiconductor equations using appropriate boundary conditions at the Schottky contacts. The calculated results show good agreement with experimenta...

Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aque...

Extraordinarily high mobility of Si and Ge atoms at semiconductor (Si, Ge)-metal (Al) interfaces is observed at temperatures as low as 80 K during thin metal film deposition. In situ x-ray photoemission spectroscopic valence-band measurements reveal a changed chemical bonding nature of the semiconductor atoms, from localized covalentlike to delocalized metalliclike, at the interface with the Al...