A room temperature operating Vertical External Cavity Surface Emitting Laser is applied around 1550 nm to intracavity laser absorption spectroscopy analyzed by timeresolved Fourier transform interferometry. At an equivalent pathlength of 15 km, the high resolution spectrum of the semiconductor disk laser emission covers 17 nm simultaneously. A noise equivalent absorption coefficient at one seco...

A communication scheme based on the synchronization of two chaotic semiconductor lasers is experimentally tested. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback. Synchronization of the chaos is achieved by coupling a fraction of the transmitter’s output power into the driving current of the receiver. We present experimental results on the r...

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III Novel submillimeter-size lenses have been fabricated in compound semiconductor substrates by mesa etching and heat treatment. These precision large-numerical-aperture microlenses are well suited for diode lasers and laser arrays in miniaturized systems. Alaser array has been efficiently coupled to an external cavity by a microlens array to achieve coherent phase locking. As part of a semico...

| The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the...

Recent progress in semiconductor quantum dot based mode locked lasers is discussed. Sub-picosecond pulse generation and extremely low phase noise have been demonstrated for both InAs/GaAs and InAs/InP material systems. Applications include e.g. OTDM sources and frequency comb generation for WDM systems, all-optical clock recovery at high bit rate or microwave photonics . Keywordsself-assembled ...