Silicon photoanodes with high activity and stability for the urea oxidation reaction are prepared by integrating an optically adaptive Ni–Mo–O coating on a metal–insulator–semiconductor junction.

The metal-semiconductor (M-S) junction based devices are commonly used in all sorts of electronic devices. Their electrical properties defined by the metallic phase with a respect to semiconductor used. Here we make an in-depth survey on origin M-S at atomic scale studying AuIn2 nanoelectrodes formed InP(001) surface situ measurements combination detailed investigation atomically resolved struc...

In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal–metal, metal–semiconductor, and semiconductor– semiconductor junctions are all...

We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The transition frequency exhibits periodic oscillations with field, consistent interference effects due the flux threading cross section of proximitized semiconductor nanowire junction. As induced superconductivity revives, additional modes emerge high fields, we attribute i...

This paper presents a device proposal based on a junction between an absorbing semiconductor nanorod structure and another window semiconductor layer for solar cell application. The possibility of band gap tuning by varying the diameter of the nanorods along the length, higher absorption coefficient at nanodimensions, the presence of a strong electrical field at the nanorod-window semiconductor...

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to ob...

We describe current-voltage measurements on superconducting Nb/lnGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover...

Control over electron-spin states, such as coherent manipulation, filtering and measurement promises access to new technologies in conventional as well as in quantum computation and quantum communication. In this paper, we review recent theoretical proposal of using electron spins in quantum confined structures as qubits. We also present a theoretical proposal for testing Bell’s inequality in n...

this paper presents density functional theory and non-equilibrium green’s function based first principles calculations to explore the sensing property of adenine and thymine based hetero-junction chins for ammonia and phosphine gas molecules. this modeling and simulation technique plays an important and crucial role in the fast growing semiconductor based nanotechnology field. the hetero-juncti...