[reaction: see text] The enzymatic degradation of starch can be monitored electronically using single-walled carbon nanotubes (SWNTs) as semiconducting probes in field-effect transistors (FETs). Incubation of these devices in aqueous buffer solutions of amyloglucosidase (AMG) results in the removal of the starch from both the silicon surfaces and the side walls of the SWNTs in the FETs, as evid...

In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Co...

All-electron Hartree–Fock and density functional calculations are performed to study the high-pressure phase transitions in gallium nitride and silicon within the framework of the linear combination of atomic orbitals using the Gaussian basis sets. Under high pressure, GaN makes a transition from the wurtzite (semiconducting) to the rock-salt (semiconducting) phase, whereas Si makes a transitio...

Research on photovoltaic energy conversion has recently received great impulse due to the growing demand for low carbon dioxide emission energy sources. In particular, the high manufacturing cost of crystalline silicon and the latest advancements on semiconducting polymer design and synthesis in recent years have directed the attention of the scientific community towards Organic Solar Cells (OS...

Atomic-scale calculations for the dynamics of the 90 partial glide dislocation in silicon are made using the effective-medium tight-binding theory. Kink formation and migration energies for the reconstructed partial dislocation are compared with experimental results for the mobility of this dislocation. The results confirm the theory that the partial moves in the dissociated state via the forma...

Title of dissertation: ELECTRON TRANSPORT SIMULATIONS AND BAND STRUCTURE CALCULATIONS OF NEW MATERIALS FOR ELECTRONICS: SILICON CARBIDE AND CARBON NANOTUBES. Gary Pennington, Doctor of Philosophy, 2003 Dissertation directed by: Professor Neil Goldsman Department of Electrical Engineering Silicon carbide (SiC) and carbon nanotubes (CNTs) are two materials which have promising potential in electr...

Single-walled carbon nanotubes (SWCNT) were prepared using iron catalysts deposited by indirect evaporation on silicon substrate covered with 500 nm-thick thermal oxide. Diode SWCNT devices have been fabricated using Au and Al, as the asymmetric metal contacts, and a random network of metallic and semiconducting nanotubes as the device channel. No effort was made to align the SWCNTs or to elimi...