Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristi...

With the ever-increasing demands for integration of advanced electronic functions into large-area electronics, down-scaling of thin-film transistors (TFTs) becomes very necessary. The key device operational issues associated with TFT scaling, including short-channel effects (SCEs) and self-heating, are considered in this paper. Device structure engineering approaches are introduced to suppress ...

Context. We present a self-consistent model of solar coronal heating in which we include the dynamical effect of the background magnetic field along a coronal structure by using exact results from wave MHD turbulence. Aims. We evaluate the heating rate and the microturbulent velocity for comparison with observations in the quiet corona, active regions and also coronal holes. Methods. The corona...

The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple and accurate characterization method for the self-heating effect (SHE) in SOI MOSFET. The ac output conductance at a chosen bias point is measured at several frequencies to determine the thermal resistance ( ) and thermal capacitance ( ) associated...

The usual operation of a conductometric sensor device requires of an external energy source (i.e. an embedded heater). In the last years, the Joule effect in the sensing material, the so called self-heating effect, offered and alternative method to provide this energy: the probing current (or voltage) applied to measure the sensor signal also serves to heat up the sensor active film. Here, evid...

Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM dev...