AbstructThe first coherent measurement of submillimeterwave sideband generator (SBG) output power is reported here. This SBG utilizes a submillimeter laser, microwave synthesizer, and high frequency Schottky diode to produce tunable radiation. Record efficiency and output power (10.5 pW) at a drive frequency of 1.6 THz has been obtained, and SBG radiation was efficiently separated from the lase...

The possible application of Schottky diodes as detector elements in receivers and image sensing systems operating in the THz frequency range has been demonstrated in the literature. In addition to metal-semiconductor (M-S) Schottky diodes, the use of heterojunction Schottky barrier diodes for detection and mixing applications has also been explored. Such diodes require lower d.c. bias voltages,...

Forty microampere current was generated on a platinum-titanium dioxide Schottky diode during the platinum catalyzed steady-state oxidation of carbon monoxide at 80 degrees C. For reaction events that produced four CO(2) molecules, three injected electrons were collected in a diode comprising a 5 nm thick platinum and a 150 nm titanium dioxide film. The electron injection flux depends on the thi...

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height ( ), ideali...

In this paper, we aim to demonstrate a novel scheme for integration of nanostructured semiconductor Graphene Oxide (GO) shottky diodes on flexible substrate for a wide range of sensing applications. The platform introduces a novel flexible GO/Pt/n-Si and GO/Pt/SiN composite structures which provides excellent optical and electrical properties, while maintaining an acceptable mechanical, biocomp...

This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to ...

We report on the first THz balanced mixer/upconverter using a Schottky diode MMIC chip. Using an optically pumped laser at 1562 GHz as an LO source with a coupled power of about 1 mW, and 1 mW input at an IF frequency of 10 GHz, we obtained a sideband output power of 23 uW (sum of two sidebands). As a mixer, at an LO of 1621 GHz, we obtain a conversion loss of 12.4 dB DSB and a noise temperatur...