The utilization of a high-Tc superconductor for implementing a superconducting qubit is to be expected. Recent researches on the quantum property of Josephson junctions in high-Tc superconductors indicate that the low energy quasiparticle excitation is weak enough to observe the macroscopic quantum tunneling. Therefore, a detailed study on the quantum property of high-Tc Josephson junctions bec...

Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven stati...

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

This letter reports a mesopiezoresistive effect in a double-barrier resonant tunneling DBRT structure. In a DBRT system, an external mechanical stress causes a tensile strain, and the strain, in turn, affects the resonant tunneling and thereby the resistance. Theoretical analysis was carried out on an AlAs /GaAs /AlAs DBRT structure under in-plane uniaxial tensile stresses. The results show tha...

We present electronic transport measurements through thiolated C60 molecules in liquid environment. The molecules were placed within a mechanically controllable break junction using a single anchoring group per molecule. When varying the electrode separation of the C60-modified junctions, we observed a peak in the conductance traces. The shape of the curves is strongly influenced by the environ...

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

One of major implementations of Linear Threshold Gate (LTG) is via resonant tunneling diodes (RTD). The functionality of this threshold logic gate greatly depends on the parameters of the RTD and parametric faults impact its functionality. A suitable fault model for Combinational Threshold Logic gates is presented. A methodology is also developed to generate test patterns that detect these para...

We develop a theory of macroscopic resonant tunneling of flux in a double-well potential in the presence of realistic flux noise with a significant low-frequency component. The rate of incoherent flux tunneling between the wells exhibits resonant peaks, the shape and position of which reflect qualitative features of the noise, and can thus serve as a diagnostic tool for studying the low-frequen...