نتایج جستجو برای: quantum pressure
تعداد نتایج: 698809 فیلتر نتایج به سال:
We present a study of the hydrostatic-pressure dependence of the photoluminescence from In0.5Al0.5As/Al0.25Ga0.75As self-assembled quantum dots. Three distinct regions of quantum-dot peak-energy shift with pressure are observed and are attributed to energy level crossings and band mixing effects. In addition, a large reduction in photoluminescence linewidth with applied pressure is noted. © 199...
A theoretical study of the effects of applied magnetic fields and hydrostatic pressure on the electron-hole transition energies in selfassembled InAs/GaAs quantum dots is presented. The effective-mass approximation and a model of a cylindrical-shaped quantum dot with in-plane parabolic potential have been used to describe the InAs/GaAs quantum dots. Present theoretical results are in quite good...
The collapse of antiferromagnetic order as a function of some quantum tuning parameter such as carrier density or hydrostatic pressure is often accompanied by a region of superconductivity. The corresponding phenomenon in the potentially simpler case of itinerant-electron ferromagnetism, however, remains more illusive. In this paper we consider the reasons why this may be so and summaries evi...
Electric field gradients (EFG’s) at the In sites and spin magnetic moments at the Ce sites were calculated for the case of solid CeIn3. The calculations were performed by increasing pressure gradually from -5 to +22 GPa within the density functional theory (DFT) using the augmented plane waves plus local orbital (APW+lo) method employing the well-known PBE-GGA+U and WC-GGA+U schemes. The resu...
In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...
Charge and entropy transport properties of the heavy-fermion compound CeRh0.58Ir0.42In5 were measured as a function of pressure. At atmospheric pressure, local moments in the compound order antiferromagnetically below TN=3.5 K, and coexisting superconductivity develops below T on c =1.04 K. Applying pressure suppresses magnetic order, but a potential quantum-critical point is hidden by a dome o...
Quantum critical behavior in heavy electron materials is typically brought about by changes in pressure or magnetic field. In this paper, we develop a simple unified model for the combined influence of pressure and magnetic field on the effectiveness of the hybridization that plays a central role in the two-fluid description of heavy electron emergence. We show that it leads to quantum critical...
The magnetic quantum criticality in strongly correlated electron systems has been considered to be closely related with the occurrence of unconventional superconductivity. Control parameters such as magnetic field, pressure or chemical doping are frequently used to externally tune the quantum phase transition for a deeper understanding. Here we report the research of a field-induced quantum pha...
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