We report on stable dual-wavelength operation in passive and hybrid mode-locking of a 10GHz two-section InAs/InP(100) quantum dot laser diode operating at 1.5μm. The range of stable passive mode-locking, the locking range of hybrid mode-locking and detailed measurements of the phase modulation in the output pulses will be presented. Keywordsmode-locked laser diode; quantum dot; hybrid mode-lock...

We present a comparative study of numerical simulations and experiments on the spatiotemporal dynamics and emission characteristics of quantum-well and quantum-dot lasers of identical structure. They show that, in the quantum-dot laser, the strong localization of carrier inversion and the small amplitude–phase coupling enable a significant improvement of beam quality compared to quantum-well la...

in this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled inas/gaas quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. the microcavity wafer sample is grown by molecular beam epitaxy (mbe) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

Strongly coupled quantum dot-cavity systems provide a non-linear configuration of hybridized light-matter states with promising quantum-optical applications. Here, we investigate the coherent interaction between strong laser pulses and quantum dot-cavity polaritons. Resonant excitation of polaritonic states and their interaction with phonons allow us to observe coherent Rabi oscillations and Ra...

Quantum dots laser diodes using the dots-in-a-well (DWELL) structure (InAs dots in an InGaAs quantum wells) have exhibited significant recent progress. With a single InAs dot layer in Inoi5Gao.8sAs quantum well, threshold current densities are as low as 26 A cm2 at 1 .25 xm. Quantum dot laser threshold current densities are now lower than any other reported semiconductor laser. In this work, th...

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

Quantum information processing (QIP) is a field concerned with technological applications of quantum mechanical phenonomena. In many cases, photons are an ideal quantum system for such applications. Photons exhibit superb coherence properties, are robust to environmental noise, and can be transmitted over long distances. One of the main difficulties of photon based quantum information processin...