This investigation experimentally demonstrates the dynamic characteristics of quantum dot vertical-cavity surface-emitting lasers (QD VCSEL) without and with light injection. The QD VCSEL is fully doped structure on GaAs substrate and operates in the 1.3 mum optical communication wavelength. The eye diagram, frequency response, and intermodulation distortion are presented. We also demonstrate t...

We report a single layer InAs/InP (100) quantum dot (QD) laser operating in continuous wave mode at room temperature on the QD ground state transition grown by metal organic vapor phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). This QDs on QW laser exhibits a high slope efficiency and a lasing wavelength of 1.74 μm. An extremely long...

We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (QD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements....

Recent experiments have explored the response of a single modeoptically injected QD laser. The experiments identify a domain ofbistability between two steady states at negative detuning and a Hopfbifurcation close to the locking threshold at positive detuning. More-over, the laser is stable for all injection levels at zero detuning. Theseobservations lead to a stability ...

Introduction: Quantum dots are attractive quantum structures owing to their superior characteristics and broad applications. A semiconductor laser with a quantum dot active region has been proven to exhibit excellent characteristics, including high differential gain, high modulation bandwidth, low threshold currents, and temperature insensitive threshold current density [1]. Quantum dot vertica...

We show that even in quantum-dot (QD) lasers with very low threshold current densities (Jth = 40–50 A/cm at 300 K), the temperature sensitivity of the threshold current arises from nonradiative recombination that comprises ∼60% to 70% of Jth at 300 K, whereas the radiative part of Jth is almost temperature insensitive. The influence of the nonradiative recombination mechanism decreases with inc...

Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the generation of picosecond and femtosecond pulses and/or broad frequency combs. They provide direct electrical control footprints down to few millimeters. Their gain bandwidths (up 50 nm ground state transitions as discussed below, with potential increase more than >200 by overlapping excited band tran...

We measure, for the first time, the gain compression coefficient and above-threshold linewidth enhancement factor (alpha parameter) in quantum dot (QD) distributed feedback lasers (DFB) by time-resolved-chirp (TRC) characterization. The alpha parameter is measured to be 2.6 at threshold and increases to 8 when the output power of the QD DFB is increased to 3 mW. The dependence of the above-thre...

*Correspondence: Guoping Dong and Jianrong Qiu, State Key Laboratory of Luminescent Materials and Device, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Tianhe District, Guangzhou, Guangzhou 510640, China e-mail: [email protected]; [email protected] Quantum dot (QD)-doped glasses have been the hotspot for their excellent electronic and optical pr...