نتایج جستجو برای: profile channel

تعداد نتایج: 440915  

Journal: :Journal of Geophysical Research: Earth Surface 2005

Journal: : 2022

Abstract Simulations of water flow in open-channel the presence an air–water interface are performed to examine velocity distribution profile deep and along channel. The simulations made for a channel with glass walls.

Journal: :Journal of chromatography. A 2010
Ji Yeon Ahn Ki Hun Kim Ju Yong Lee P Stephen Williams Myeong Hee Moon

The separation efficiencies of three different asymmetrical flow field-flow fractionation (AF4) channel designs were evaluated using polystyrene latex standards. Channel breadth was held constant for one channel (rectangular profile), and was reduced either linearly (trapezoidal profile) or exponentially (exponential profile) along the length for the other two. The effective void volumes of the...

Journal: :IEEE Journal on Selected Areas in Communications 2002
Atul Salvekar Jérôme Louveaux Carlos H. Aldana Jeannie Lee Fang Elisabeth de Carvalho John M. Cioffi

Multiuser transmission methods for digital subscriber line (DSL) systems have become of interest with the potential for increased data rate and loop reach. These methods often assume that the set of crosstalk interferers, called the crosstalk profile, and their associated channel responses are known. For DSL systems, the interferers are often uncoordinated, so that in a dynamic environment wher...

2004
W. T. Pike W. J. Karl S. Kumar S. Vijendran T. Semple

The quality of channel sidewalls resulting from through-wafer deep reactive-ion etching is analysed using scanning electron microscopy, atomic-force microscopy and interferometry. Sidewall quality and profile are highly dependent on the width of the etched channel. Channels narrower than 100 lm show generally good sidewall smoothness, though with a bowed profile. This profile leads to ion-induc...

2012
Pil Sung Park Digbijoy N. Nath Sriram Krishnamoorthy Siddharth Rajan

We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5–6 nm of vertical channel depth was formed by grading the channel region linearly from GaN to Al0.15Ga0.85 N over 50 Å. ...

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