Remote plasma systems operating at moderate pressures (tens to hundreds of milli-Torr) are being developed for use in deposition and etching of microelectronics materials. In particular, remote plasma-enhanced chemical vapour deposition (RPECVD) has been investigated for fabrication of μc-Si, Si3N4 and SiO2 films, as well as for plasma cleaning and passivation. RPECVD reactors typically consist...

The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial ...

Microstructures of well-aligned multiwall carbon nanotubes grown on patterned nickel nanodots and uniform thin films by plasma-enhanced chemical vapor deposition have been studied by electron microscopy. It was found that growth of carbon nanotubes on patterned nickel nanodots and uniform thin films is different. During growth of carbon nanotubes, a nickel particle sits at the tip of each nanot...

A comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of a-Si:H is presented, with special emphasis on the effects of hydrogen dilution. Growth rates at comparable plasma power, for substrate temperatures between 100°C and 300°C and for various H2 dilution ratios are presented, along with optical bandgap, H content, and el...

Articles you may be interested in Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition Plasma...

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ~ H2, O2, N2, He, Ne, Ar, and Kr! and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) 5 I0 exp( 2 P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the var...

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes...