Hong–Ou–Mandel (HOM) interference—the bunching of indistinguishable photons at a beamsplitter—is staple quantum optics and lies the heart many sensing approaches recent optical computers. Here we report full-field, scan-free imaging technique that exploits HOM interference to reconstruct surface depth profile transparent samples. We demonstrate ability retrieve images with micrometre-scale feat...

PURPOSE With the advent of state-of-the-art treatment technologies, the use of small fields has increased, and dosimetry in small fields is highly challenging. In this study, the potential use of Varian electronic portal imaging device (EPID) for small field measurements was explored for 6 and 15 MV photon beams. MATERIALS AND METHODS The output factors and profiles were measured for a range ...

A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 μm complementary metal-oxide-semiconductor single-photon avalanche diode (SPAD) plus time-to-digital conv...

A heated semiconductor light-emitting diode at low forward bias voltage V<k(B)T/q is shown to use electrical work to pump heat from the lattice to the photon field. Here the rates of both radiative and nonradiative recombination have contributions at linear order in V. As a result the device's wall-plug (i.e., power conversion) efficiency is inversely proportional to its output power and diverg...

A new, simple, high-speed, and hardware-only integration-based fluorescence-lifetime-sensing algorithm using a center-of-mass method (CMM) is proposed to implement lifetime calculations, and its signal-to-noise-ratio based on statistics theory is also deduced. Compared to the commonly used iterative least-squares method or the maximum-likelihood-estimation-based, general purpose fluorescence li...

In this paper, a new photonic gated-diode method is proposed to extract the energy-dependent and the spatial distributions of interface states in metal-oxide-semiconductor field-effect transistors (MOSFETs). For the photonic current-voltage (I-V) characterization of MOSFETs, an optical source with a photon energy less than the silicon bandgap (hν = 0.95 eV < Eg = 1.12 eV) is employed for the ch...

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized $0.13~\mu \text{m}$ CMOS technology is presented. The SPAD has depleted absorption volume of approximately notation="LaTeX">$15\,\,...