We propose a device architecture for a transistor-type organic photomemory that can be programmed fast enough for use in electrical photography. Following the strategies used in a flash memory where an isolated charge storage node or floating gate is employed, the proposed organic photomemory adopts an isolated photo-absorption zone that is embedded between upper and lower insulator layers with...

This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, ...

The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation open a wide field of new applications such as highly effective solar cells and fibre-enhanced polymers. In this work we study the charge transfer in individual...

Graphene field-effect transistors are recognized as a potential alternative to metal-oxide-semiconductor and can become new element base in the post-silicon epoch. Increasing efficiency of graphene electronic devices simplifying their manufacturing technology important R&D areas. New technical solutions related development proposed paper. A reduced oxide (RGO) film was used conducting chann...

Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 – 50 cm. The resonance frequency red-shifts with increasing negative gate bias as expected. Phot...

OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the switching characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into t...

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

Oxide semiconductors are of particular interest in the field integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with linearity based on unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) a-SIZO exhibits maximum...