Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

The mechanical behavior of freestanding gold membranes 0.5 micron thick with and without passivation layers was studied with a membrane deflection experiment. Membrane width was varied from 2.5 to 20 microns to investigate size effects. The presence of the passivation layer had the effect of reducing the membrane strength. Yield stress, as well as fracture strain and stress, were all found to b...

The influence of surface chemical treatments and of deposition of a SiO2 surface passivation layer on carrier distributions and mobility in AlxGa12xN/GaN heterostructure field-effect-transistor epitaxial layer structures is investigated. Surface chemical treatments are found to exert little influence on carrier distribution and mobility. Deposition of a SiO2 surface passivation layer is found t...

This study proposes a two-photomask process for fabricating amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene...

To improve the bulk minority carrier lifetime in String Ribbon silicon, SiNx induced defect passivation during a post deposition anneal is investigated. Our results indicate that SiNx induced hydrogen passivation is very effective when the SiNx film is annealed in conjunction with a screen-printed AI layer on the back. In addition, it is found that controlled rapid cooling can be used to enhanc...

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passiv...

Semiconductor (SC) quantum dots (QDs) have recently been fabricated by both chemical and plasma techniques for specific absorption and emission of light. Their optical properties are governed by the size of the QD and the chemistry of any passivation at their surface. Here, we decouple the effects of confinement and passivation by utilising DC magnetron sputtering to fabricate SC QDs in a perfl...

Dielectric interface would be formed on the electrode surface during the analysis or disposal of many phenolic compounds due to electro-polymerization. This could cause electrode passivation, also called electrode fouling, which is indicated by the continuously decaying current signal. This paper proposed a model based on the potential drop across the fouling layer, which is helpful for deep un...